?2005 fairchild semiconductor corporation 1 www.fairchildsemi.com ffa60up30dn rev. a ffa60up30dn 60 a, 300 v ultrafast dual diode ffa60up30dn features ? ultrafast recovery , t rr = 55 ns (@i f = 30 a) ? max. forward voltage, v f = 1.5 v (@ t c = 25c) ? reverse voltage: v rrm = 300 v ? avalanche energy rated applications ? general p urpose ? switching mode power supply ? free-wheeling diode for motor a pplication ? power switching circuits absolute maximum ratings (per diode) t a = 25c unless otherwise noted thermal characteristics t a = 25c unless otherwise noted symbol parameter value unit v rrm peak repetitive reverse voltage 300 v v rwm working peak reverse voltage 300 v v r dc blocking voltage 300 v i f(av) average rectified forward current @ t c = 135 c3 0 a i fsm non-repetitive peak surge current 60hz single half-sine wave 300 a t j, t stg operating junction and storage temperature - 65 to +150 c symbol parameter max units r jc maximum thermal resistance, junction to case 0.53 c/w to-3p n 1 1.anode 2.cathode 3.anode 1. anode 2. cathode 3. anode 1 2 3 60 a, 300 v ultrafast dual diode the ffa60up30dn is an ultrafast diode with low forward voltage drop and rugged uis capability. this device is intended for use as freewheeling and clamping diodes in a variety of switching power supplies and other power s witching applications. it is specially s uited for us e in switching power s upplies and industrial applicationa as welder and ups application. ? rohs compliant tm septempber 2005
2 www.fairchildsemi.com ffa60up30dn 60 a, 300 v ultrafast dual diode electrical characteristics (per diode) t a = 25c unless otherwise noted * pulse test: pulse width=300 s, duty cycle= 2% symbol parameter min. typ. max. unit v f * i f = 30 a i f = 30 a t c = 25 c t c = 150 c - - - - 1.5 1.3 v v i r * v r = 300 v v r = 300 v t c = 25 c t c = 150 c - - - - 100 500 a a t rr i f =1 a, di/dt = 100 a/s, v cc = 30 v i f =30 a, di/dt = 200 a/s, v cc = 195 v t c = 25 c t c = 25 c - - - - 45 55 ns ns t a t b q rr i f =30 a, di/dt = 200 a/s, v cc = 195 v t c = 25 c t c = 25 c t c = 25 c - - - 17 15 50 - - - ns ns nc w avl avalanche energy (l = 20 mh) 20 - - mj ?2 005 fairchild semiconductor cor poratio n ffa60up30dn rev. a
3 www.fairchildsemi.com ffa60up30dn 60 a, 300 v ultrafast dual diode typical performance characteristics figure 1. typical forward voltage dr op figure 2. typical reverse current figure 3. typical junction capacitance f igure 4. typical reverse recovery time figure 5. typical reverse recovery current figure 6. forward current deration curve 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0.1 1 10 100 t c = 100 o c forward current, i f [a] forward voltage, v f [v] t c = 25 o c 0 50 100 150 200 250 300 350 0.01 0.1 1 10 100 t c = 100 o c reverse current, i r [ a] reverse voltage, v r [v] t c = 25 o c 0.1 1 10 100 10 100 1000 capacitance, c j [pf] reverse voltage, v r [v] 100 200 300 400 500 20 30 40 50 60 70 reverse recovery time, t rr [ns] di / dt [a/ s] t c = 100 o c t c = 25 o c 100 200 300 400 500 0 2 4 6 8 10 12 t c = 100 o c reverse recovery current, i rr [a] di / dt [a/ s] t c = 25 o c 125 130 135 140 145 150 0 5 10 15 20 25 30 35 40 average rectified forward current, i f(av) [a] case temperature, tc [ o c] dc ?2005 fairchild semiconductor corporation ffa60up30dn rev. a
ffa60up30dn 60 a, 300 v ultrafast dual diode mechanical dimensions dimensions in millimeters to-3pn ?2005 fairchild semiconductor corporation ffa60up30dn rev. a
?2005 fairchild semiconductor corporation ffa60up30dn rev. a
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